switching diode da221m ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1)ultra small mold type. (vmd3) 2)high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge ma pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 1.0 v i f =10ma i r - - 0.1 a v r =15v ct - - 3.0 pf v r =6v , f=1mhz capacitance between terminals parameter conditions forward voltage reverse current storage temperature ? 55 to ? 150 power dissipation 150 junction temperature 150 average rectified forward current (single) 100 surge current (t=1us) (single) 300 reverse voltage (dc) 20 forward current surge peak(single) 200 parameter limits reverse voltage (repatitive peak) 20 vmd3 0.45 0.4 1.15 0.4 0.8 0.45 0.5 1.30.05 0 (4.00.1) 4.00.07 2.00.04 1.550.05 3.50.05 1.750.07 8.00.1 0.30.1 0.60.05 0 0.50.05 2.00.05 1.350.05 0 5.50.2 00.1 rohm : vmd3 dot (year week factory) 1.20.1 0.80.1 0.50.05 0.130.05 0.220.05 (3) 1.20.1 0.4 0.4 (1) (2) 0.220.05 0.320.05 00.1 (1)d1:a (2)d2:c (3)d1:c d2:a 1/3 2011.06 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
da221m 820 830 840 850 860 870 d2 0 1 2 3 4 5 forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics reverse voltage:vr(v) vr-ct characteristics capacitance between terminals:ct(pf) vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 10 100 0 5 10 15 ta=125 ta=-25 ta=25 ta=75 ta=150 0.001 0.01 0.1 1 10 100 051 01 5 ta=125 ta=-25 ta=25 ta=75 ta=150 d2 0.1 1 10 0 5 10 15 f=1mhz 0.1 1 10 0 5 10 15 d2 f=1mhz 680 690 700 710 720 730 ave:709.8mv ta=25 if=10ma n=30pcs ave:849.7mv ta=25 if=10ma n=30pcs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ta=25 vr=15v n=30pcs ave:0.1065na 0 1 2 3 4 5 6 7 8 9 10 d2 ta=25 vr=15v n=30pcs ave:0.620na 0 1 2 3 4 5 6 7 8 9 10 ave:1.85pf ta=25 vr=6v f=1mhz n=10pcs ave:1.20ns ta=25 vr=6v if=10ma rl=100 irr=0.1*ir n=10pcs 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 100 0 110 0 ta=-25 ta=125 ta=75 ta=25 ta=150 d2 d1 d1 d1 d1 d1 d1 d1 2/3 2011.06 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
da221m 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) electrostatic discharge test esd(kv) esd dispersion map ave:0.33kv ave:0.96kv c=200pf r=0 c=100pf r=1.5k 1ms im=1ma if=10ma 300us time mounted on epoxy board d1 0 1 2 3 4 5 6 7 8 9 10 ave:1.27kv c=200pf r=0 c=100pf r=1.5k ave:5.06kv d2 electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.06 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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